DPG10I300PA low loss and soft recovery high performance fast recovery diode single diode hiperfred2 1 3 part number DPG10I300PA backside: cathode fav rr tns 35 rrm 10 300 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) to-220 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG10I300PA n s 3 a t vj =c reverse recovery time a 5.5 35 45 n s i rm max. reverse recovery current i f =a; 10 25 t=125c vj -di f =a/s 200 /dt t rr v r =v 200 t vj =c 25 t=125c vj v = v symbol definition ratings typ. max. i r v i a v f 1.27 r 2.3 k/ w r min. 10 v rsm v 1 t = 25c vj t = c vj m a 0.06 v = v r t = 25c vj i = a f v t = c c 150 p tot 65 w t = 25c c r k/ w 10 300 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 1.45 t = 25c vj 150 v f0 v 0.74 t = c vj 175 r f 17.7 m ? threshold voltage slope resistance for power loss calculation only a 150 v rrm v 300 max. repetitive reverse blocking voltage t = 25c vj c j 15 j unction capacitance v = v 150 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 140 a 300 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 300 0.50 ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG10I300PA ratings xxxxxx zyyww logo part number date code lot # abcdef product markin g a ssembly line d p g 10 i 300 pa part number diode hiperfred extreme fast single diode to-220ac (2) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 0.6 mounting torque 0.4 t vj c 175 virtual junction temperature -55 weight g 2 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 150 -55 to-220 similar part package voltage class dpg10im300uc to-252aa (dpak) 300 delivery mode quantity code no. part number marking on product ordering DPG10I300PA 506640 tube 50 DPG10I300PA standard t stg c 150 storage temperature -55 threshold voltage v 0.74 m ? v 0 max r 0 max slope resistance * 14.5 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG10I300PA dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 5.08 bsc 0.200 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 2x b2 e ?p q d l1 l 2x b e c a2 h1 a1 a 13 4 1 3 outlines to-220 ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG10I300PA 0 100 200 300 400 500 20 40 60 80 04080120160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] 0 100 200 300 400 500 0 2 4 6 8 10 12 0 100 200 300 400 500 600 v fr [v] 0 100 200 300 400 500 0 2 4 6 8 10 12 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.0 0.4 0.8 1.2 1.6 2.0 0 5 10 15 20 25 30 i rr [a] q rr [ c] i f [a] v f [v] -di f /dt [a/ s] t rr [ns] v fr t fr i rr q rr -di f /dt [a/ s] t vj = 125c v r =200 v -di f /dt [a/ s] 5 a 10 a t vj =125c v r = 200 v -di f /dt [a/ s] 0.001 0.01 0.1 1 10 0 1 2 3 t[s] z thjh [k/w] 0 100 200 300 400 500 0 2 4 6 8 10 e rec [ j] -di f /dt [a/ s] t vj =25c 125c 150c fig. 1 forward current i f versus v f fig. 2 typ. reverse recov. charge q rr versus -di f /dt fig. 3 typ. reverse recov. current i rr versus -di f /dt fig. 4 typ. dynamic parameters q rr ,i rr versus t vj fig. 5 typ. reverse recov. time t rr versus -di f /dt fig. 6 typ. forward recov. voltage v fr and t fr versus di f /dt fig. 7 typ. recovery energy e rec versus -di f /dt fig. 8 transient thermal resistance junction to case t vj =125c v r =200v i f = 20 a t vj =125c v r = 200 v 20 a 10 a 5 a 20 a 10 a 5a t vj =125c i f = 10 a v r = 200 v i f = 5 a 10 a 20 a t fr [ns] r thi [k/w] 0.3866 0.7062 0.8127 0.3945 t i [s] 0.0004 0.0025 0.022 0.13 fast diode ixys reserves the right to change limits, conditions and dimensions. 20131125a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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